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1. product pro?le 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a sot457 (sc-74) small surface-mounted device (smd) plastic package. pnp complement: pbss303pd. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n high-voltage dc-to-dc conversion n high-voltage mosfet gate driving n high-voltage motor control n high-voltage power switches (e.g. motors, fans) n thin film transistor (tft) backlight inverter n automotive applications 1.4 quick reference data [1] device mounted on a ceramic pcb, al 2 o 3 standard footprint. [2] pulse test: t p 300 m s; d 0.02. PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor rev. 02 14 december 2007 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 60 v i c collector current [1] --3a i cm peak collector current single pulse; t p 1ms --6a r cesat collector-emitter saturation resistance i c =2a; i b = 200 ma [2] - 6890m w
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 2 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking table 2. pinning pin description simpli?ed outline symbol 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector 13 2 4 5 6 sym014 1, 2, 5, 6 4 3 table 3. ordering information type number package name description version PBSS303ND sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 table 4. marking codes type number marking code PBSS303ND ae
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 3 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [4] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [5] pulse test: t p 10 ms; d 10 %. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 60 v v ceo collector-emitter voltage open base - 60 v v ebo emitter-base voltage open collector - 5 v i c collector current [1] -1a [2] -3a i cm peak collector current single pulse; t p 1ms -6a i b base current - 0.8 a i bm peak base current single pulse; t p 1ms -2a p tot total power dissipation t amb 25 c [1] - 360 mw [3] - 600 mw [4] - 750 mw [2] - 1.1 w [1] [5] - 2.5 w t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 4 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . [4] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. [5] pulse test: t p 10 ms; d 10 %. (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 6 cm 2 (3) fr4 pcb, mounting pad for collector 1 cm 2 (4) fr4 pcb, standard footprint fig 1. power derating curves (1) t amb ( c) - 75 175 125 25 75 - 25 006aaa270 800 400 1200 1600 p tot (mw) 0 (2) (4) (3) table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 350 k/w [2] - - 208 k/w [3] - - 167 k/w [4] - - 113 k/w [1] [5] --50k/w r th(j-sp) thermal resistance from junction to solder point --45k/w
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 5 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa271 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aaa272 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 6 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor fr4 pcb, mounting pad for collector 6 cm 2 fig 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 5. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa273 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aaa751 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 7 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 7. characteristics table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =60v; i e = 0 a - - 100 na v cb =60v; i e =0a; t j = 150 c --50 m a i ces collector-emitter cut-off current v ce =48v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na h fe dc current gain v ce =2v; i c = 0.5 a 345 570 - v ce =2v; i c =1a [1] 315 530 - v ce =2v; i c =2a [1] 250 380 - v ce =2v; i c =3a [1] 120 185 - v ce =2v; i c =4a [1] 60 95 - v ce =2v; i c =5a [1] 35 60 - v ce =2v; i c =6a [1] 20 40 - v cesat collector-emitter saturation voltage i c = 0.5 a; i b = 50 ma - 40 55 mv i c = 1 a; i b = 50 ma - 80 105 mv i c = 2 a; i b = 200 ma [1] - 135 180 mv i c = 3 a; i b = 150 ma [1] - 210 280 mv i c = 3 a; i b = 300 ma [1] - 195 260 mv i c = 4 a; i b = 400 ma [1] - 255 340 mv i c = 5 a; i b = 0.5 a [1] - 320 425 mv i c = 6 a; i b = 0.6 a [1] - 385 515 mv r cesat collector-emitter saturation resistance i c = 2 a; i b = 200 ma [1] - 6890m w v besat base-emitter saturation voltage i c = 0.5 a; i b = 50 ma - 0.79 0.88 v i c = 1 a; i b = 50 ma - 0.81 0.89 v i c = 1 a; i b = 100 ma [1] - 0.83 0.92 v i c = 3 a; i b = 150 ma [1] - 0.92 0.99 v i c = 3 a; i b = 300 ma [1] - 0.95 1.02 v v beon base-emitter turn-on voltage v ce =2v; i c = 2 a - 0.79 1 v
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 8 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor [1] pulse test: t p 300 m s; d 0.02. t d delay time v cc = 9.2 v; i c = 2 a; i bon = 0.1 a; i boff = - 0.1 a -12-ns t r rise time - 103 - ns t on turn-on time - 115 - ns t s storage time - 401 - ns t f fall time - 264 - ns t off turn-off time - 665 - ns f t transition frequency v ce =10v; i c = 100 ma; f = 100 mhz - 140 - mhz c c collector capacitance v cb =10v;i e =i e =0a; f=1mhz -33-pf table 7. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 9 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 6. dc current gain as a function of collector current; typical values fig 7. collector current as a function of collector-emitter voltage; typical values v ce =2v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 8. base-emitter voltage as a function of collector current; typical values fig 9. base-emitter saturation voltage as a function of collector current; typical values 006aaa703 400 800 1200 h fe 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) v ce (v) 0 2.0 1.6 0.8 1.2 0.4 006aaa704 2 4 6 i c (a) 0 144 128 112 96 80 i b = 160 ma 16 32 48 64 006aaa705 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa706 0.4 0.8 1.2 v besat (v) 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3)
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 10 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 10. collector-emitter saturation voltage as a function of collector current; typical values fig 11. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 12. collector-emitter saturation resistance as a function of collector current; typical values fig 13. collector-emitter saturation resistance as a function of collector current; typical values 006aaa707 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa708 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa709 i c (ma) 10 - 1 10 4 10 3 110 2 10 10 - 1 1 10 10 2 r cesat ( w ) 10 - 2 (1) (2) (3) i c (ma) 10 - 1 10 4 10 3 110 2 10 006aaa710 1 10 - 1 10 2 10 10 3 r cesat ( w ) 10 - 2 (1) (2) (3)
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 11 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 8. test information fig 14. biss transistor switching time de?nition v cc = 9.2 v; i c = 2 a; i bon = 0.1 a; i boff = - 0.1 a fig 15. test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 12 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping fig 16. package outline sot457 (sc-74) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBSS303ND sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 13 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 11. soldering dimensions in mm fig 17. re?ow soldering footprint sot457 (sc-74) dimensions in mm fig 18. wave soldering footprint sot457 (sc-74) solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 msc423 1.45 4.45 5.05 solder lands solder resist occupied area
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 14 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBSS303ND_2 20071214 product data sheet - PBSS303ND_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? t ab le 6 : typing error for maximum value on 6 cm 2 footprint amended ? section 13 legal inf or mation : updated PBSS303ND_1 20060406 product data sheet - -
PBSS303ND_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 14 december 2007 15 of 16 nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PBSS303ND 60 v, 3 a npn low v cesat (biss) transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 14 december 2007 document identifier: PBSS303ND_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 packing information. . . . . . . . . . . . . . . . . . . . . 12 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14 contact information. . . . . . . . . . . . . . . . . . . . . 15 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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